DIODES BCW66HQTA

DIODES · Transistors (BJTs) · MPN BCW66HQTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO7V
DC Current Gain250
Pd - Power Dissipation310mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 310mW Surface Mount SOT-23

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