DIODES BCP5610QTA

DIODES · Transistors (BJTs) · MPN BCP5610QTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain63
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V 63 NPN 1A SOT-223-3 Single Bipolar Transistors RoHS

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