DIODES BCP5210TA

DIODES · Transistors (BJTs) · MPN BCP5210TA

No reviews yet — be the first to review DIODES BCP5210TA.

Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 60V 1A 150MHz 2W Surface Mount SOT-223

Related Transistors (BJTs)