DIODES BC858CW-7-F

DIODES · Transistors (BJTs) · MPN BC858CW-7-F

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 200MHz 350mW Surface Mount SOT-323

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