DIODES BC857CWQ-13

DIODES · Transistors (BJTs) · MPN BC857CWQ-13

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Specifications

Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

45V PNP 1 PNP 100mA SOT-323 Single Bipolar Transistors RoHS

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