DIODES BC857BLP-7

DIODES · Transistors (BJTs) · MPN BC857BLP-7

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 1000mW Surface Mount DFN-3L(0.6x1)

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