DIODES BC847BWQ-13-F

DIODES · Transistors (BJTs) · MPN BC847BWQ-13-F

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 200mW Surface Mount SOT-323

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