DIODES BC847BS-7-F

DIODES · Transistors (BJTs) · MPN BC847BS-7-F

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Specifications

Current - Collector Cutoff20nA
DC Current Gain200
Pd - Power Dissipation200mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200mW Surface Mount SOT-363

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