DIODES BC847BLP-7

DIODES · Transistors (BJTs) · MPN BC847BLP-7

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))80mV

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 1000mW Surface Mount DFN-3(1x0.6)

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