DIODES BC847BFA-7B

DIODES · Transistors (BJTs) · MPN BC847BFA-7B

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation435mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))50mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 170MHz 435mW Surface Mount DFN-3(0.8x0.6)

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