DIODES APT17NTR-G1

DIODES · Transistors (BJTs) · MPN APT17NTR-G1

No reviews yet — be the first to review DIODES APT17NTR-G1.

Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO480V
Emitter-Base Voltage VEBO10V
DC Current Gain24.5
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 480V 50mA 0.2W Surface Mount SOT-23-3

Related Transistors (BJTs)