DIODES ADTC114ECAQ-7

DIODES · Transistors (BJTs) · MPN ADTC114ECAQ-7

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation310mW
Voltage - Input(Max)(VI(off))1.1V
Input Voltage (VI(on)@Ic,Vce)1.9V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 310mW Surface Mount SOT-23

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