DIODES ADC114EUQ-13

DIODES · Transistors (BJTs) · MPN ADC114EUQ-13

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
typeNPN
Output Voltage(VO(on))300mV
Number2 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation270mW
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))1.1V
Input Voltage (VI(on)@Ic,Vce)1.9V
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 270mW Surface Mount SOT-363

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