DIODES 2N7002Q-7-F

DIODES · FETs & Power MOSFETs · MPN 2N7002Q-7-F

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Specifications

Gate Charge(Qg)223pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation540mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

N-Channel 60V 210mA 540mW Surface Mount SOT-23

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