DIODES 2N7002K-13

DIODES · FETs & Power MOSFETs · MPN 2N7002K-13

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Specifications

Gate Charge(Qg)300pC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF

Technical details

60V 380mA 2.5V 370mW 2Ω@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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