DIODES 2N7002H-7

DIODES · FETs & Power MOSFETs · MPN 2N7002H-7

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Specifications

Gate Charge(Qg)352pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)2.8pF
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation510mW
Reverse Transfer Capacitance (Crss@Vds)2.1pF
RDS(on)3Ω@5V
Number1 N-channel
Input Capacitance(Ciss)26pF
TypeN-Channel

Technical details

N-Channel 60V 210mA 510mW Surface Mount SOT-23

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