DIODES · FETs & Power MOSFETs · MPN 2N7002H-13
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| Gate Charge(Qg) | 350pC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 210mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 370mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| RDS(on) | 7.5Ω@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 26pF |
60V 210mA 3V 370mW 7.5Ω@5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS