DIODES 2N7002-13-F

DIODES · FETs & Power MOSFETs · MPN 2N7002-13-F

No reviews yet — be the first to review DIODES 2N7002-13-F.

Specifications

Output Capacitance(Coss)11pF
Pd - Power Dissipation540mW
Gate Charge(Qg)223pC
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

540mW 60V 1V 2.4Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs