DIODES 2DB1386R-13

DIODES · Transistors (BJTs) · MPN 2DB1386R-13

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain180
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1W Surface Mount SOT-89

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