Comchip CJ3139KDW-G

Comchip · FETs & Power MOSFETs · MPN CJ3139KDW-G

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Specifications

Current - Continuous Drain(Id)660mA
Pd - Power Dissipation150mW
RDS(on)520mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)15pF
Number2 P-Channel
Input Capacitance(Ciss)170pF
Gate Charge(Qg)-
Operating Temperature-40℃~+150℃
Output Capacitance(Coss)25pF

Technical details

660mA 150mW 520mΩ@4.5V 1.1V 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS

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