Comchip · FETs & Power MOSFETs · MPN CJ3139KDW-G
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| Current - Continuous Drain(Id) | 660mA |
|---|---|
| Pd - Power Dissipation | 150mW |
| RDS(on) | 520mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 170pF |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Output Capacitance(Coss) | 25pF |
660mA 150mW 520mΩ@4.5V 1.1V 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS