Cmos MJD42CT4G

Cmos · Transistors (BJTs) · MPN MJD42CT4G

No reviews yet — be the first to review Cmos MJD42CT4G.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain75
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation20W
Number1 PNP
typePNP
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor 100V 6A 3MHz Surface Mount TO-252

Related Transistors (BJTs)