Cmos IRF5803B

Cmos · FETs & Power MOSFETs · MPN IRF5803B

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)98mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.6nF

Technical details

P-Channel 60V 4A 2W Surface Mount TSOP-6

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