Cmos · FETs & Power MOSFETs · MPN CMU4N65
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| Gate Charge(Qg) | 18nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 2.6Ω |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
N-Channel 650V 4A 60W Through Hole TO-251