Cmos CMSV65R190Q

Cmos · FETs & Power MOSFETs · MPN CMSV65R190Q

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Specifications

Gate Charge(Qg)36nC
Drain to Source Voltage650V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)199mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.43nF
TypeN-Channel

Technical details

N-Channel 650V 20A 140W Surface Mount DFN-8(8x8)

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