Cmos CMSL018N10

Cmos · FETs & Power MOSFETs · MPN CMSL018N10

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Specifications

Gate Charge(Qg)168nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.8nF
Current - Continuous Drain(Id)292A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312W
RDS(on)1.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)530pF
Number1 N-channel
Input Capacitance(Ciss)11.1nF
TypeN-Channel

Technical details

100V 292A 4V 312W 1.8mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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