Cmos CMP50N10

Cmos · FETs & Power MOSFETs · MPN CMP50N10

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage100V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)17mΩ
Number1 N-channel
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

N-Channel 100V 50A 100W Through Hole TO-220

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