Cmos CMP4N65

Cmos · FETs & Power MOSFETs · MPN CMP4N65

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Specifications

Gate Charge(Qg)18nC@520V
Drain to Source Voltage650V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 650V 4A 100W Through Hole TO-220

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