Cmos CMP200N25

Cmos · FETs & Power MOSFETs · MPN CMP200N25

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)90A
Output Capacitance(Coss)3nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Number1 N-channel
Input Capacitance(Ciss)4.6nF
TypeN-Channel

Technical details

N-Channel 250V 90A Through Hole TO-220

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