Cmos CMP10N65

Cmos · FETs & Power MOSFETs · MPN CMP10N65

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation162W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

N-Channel 650V 10A 162W Through Hole TO-220

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