Cmos CMP10N60

Cmos · FETs & Power MOSFETs · MPN CMP10N60

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Specifications

Gate Charge(Qg)38nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

N-Channel 600V 10A 160W Through Hole TO-220

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