Cmos CMP029N10

Cmos · FETs & Power MOSFETs · MPN CMP029N10

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Specifications

Gate Charge(Qg)150nC
Drain to Source Voltage100V
Output Capacitance(Coss)4.15nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation400W
Reverse Transfer Capacitance (Crss@Vds)650pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.2nF
TypeN-Channel

Technical details

N-Channel 100V 120A 400W Through Hole TO-220

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