Cmos CMP029N06

Cmos · FETs & Power MOSFETs · MPN CMP029N06

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Specifications

Gate Charge(Qg)74nC@10V
Configuration-
Drain to Source Voltage60V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation180W
RDS(on)2.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)4.7nF

Technical details

N-Channel 60V 160A 180W Through Hole TO-220

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