Cmos CMN2309M

Cmos · FETs & Power MOSFETs · MPN CMN2309M

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)165mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)500pF

Technical details

P-Channel 60V 2A 1W Surface Mount SOT-23-3L

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