Cmos CMI8N50

Cmos · FETs & Power MOSFETs · MPN CMI8N50

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)26nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
RDS(on)710mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 500V 8A 130W Through Hole TO-262

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