Cmos CMHG65R020-4

Cmos · FETs & Power MOSFETs · MPN CMHG65R020-4

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)125nC
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)470pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation350W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)26mΩ
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

650V 100A 4.5V 350W 26mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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