Cmos CMH65R190SD

Cmos · FETs & Power MOSFETs · MPN CMH65R190SD

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)23A
Output Capacitance(Coss)85pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)210mΩ@10V
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 650V 23A 250W Through Hole TO-247

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