Cmos CMH65R190Q

Cmos · FETs & Power MOSFETs · MPN CMH65R190Q

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)37nC
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
RDS(on)190mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)60pF
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 650V 20A 250W Through Hole TO-247

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