Cmos CMH65R086SD

Cmos · FETs & Power MOSFETs · MPN CMH65R086SD

No reviews yet — be the first to review Cmos CMH65R086SD.

Specifications

Gate Charge(Qg)76nC
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation480W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)75mΩ
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

650V 55A 5V 480W 75mΩ N-Channel TO-247 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs