Cmos CMH65R046SD

Cmos · FETs & Power MOSFETs · MPN CMH65R046SD

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Specifications

Gate Charge(Qg)168nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)74A
Output Capacitance(Coss)350pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation680W
RDS(on)41mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)6.8nF
TypeN-Channel

Technical details

N-Channel 650V 74A 680W Through Hole TO-247

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