Cmos CMF65R580Q

Cmos · FETs & Power MOSFETs · MPN CMF65R580Q

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Specifications

Gate Charge(Qg)18nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)580mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 650V 8A 30W Through Hole TO-220F

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