Cmos CMF65R190SD

Cmos · FETs & Power MOSFETs · MPN CMF65R190SD

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)49nC@10V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 650V 20A 245W Through Hole TO-220F

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