Cmos CMF65R190

Cmos · FETs & Power MOSFETs · MPN CMF65R190

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)37nC@10V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)173mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 650V 20A 35W Through Hole TO-220F

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