Cmos CMF65R080SD

Cmos · FETs & Power MOSFETs · MPN CMF65R080SD

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)67mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

N-Channel 650V 55A Through Hole TO-220F

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