Cmos CMF11N60B

Cmos · FETs & Power MOSFETs · MPN CMF11N60B

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Specifications

Gate Charge(Qg)35nC
ConfigurationHalf-Bridge
Drain to Source Voltage600V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)570mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF

Technical details

N-Channel 600V 11A 50W Through Hole TO-220F

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