Cmos CMF10N65A

Cmos · FETs & Power MOSFETs · MPN CMF10N65A

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Specifications

Gate Charge(Qg)34nC@10V
ConfigurationHalf-Bridge
Drain to Source Voltage650V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

N-Channel 650V 10A 230W Through Hole TO-220F

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