Cmos · FETs & Power MOSFETs · MPN CME4N10M
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| Gate Charge(Qg) | 5nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 30pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 280mΩ |
| Input Capacitance(Ciss) | 180pF |
| Type | N-Channel |
100V 4A 2V 2.5W 280mΩ N-Channel SOT-89 Single FETs, MOSFETs RoHS