Cmos CMD9N50A

Cmos · FETs & Power MOSFETs · MPN CMD9N50A

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation180W
Gate Charge(Qg)23nC
Configuration-
Drain to Source Voltage500V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.15nF

Technical details

180W 500V 2V 620mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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