Cmos CMD90R900D

Cmos · FETs & Power MOSFETs · MPN CMD90R900D

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Specifications

Gate Charge(Qg)13nC
Configuration-
Drain to Source Voltage900V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 900V 9A 65W Surface Mount TO-252

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