Cmos CMD80N06

Cmos · FETs & Power MOSFETs · MPN CMD80N06

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)8.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

N-Channel 60V 80A 150W Surface Mount TO-252

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