Cmos CMD65R580

Cmos · FETs & Power MOSFETs · MPN CMD65R580

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Specifications

Gate Charge(Qg)20nC@480V
Drain to Source Voltage650V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

N-Channel 650V 8A 45W Surface Mount TO-252

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